{"title":"Low noise, high-speed InP/InGaAs HBTs","authors":"S. Hsu, D. Pavlidis","doi":"10.1109/GAAS.2001.964375","DOIUrl":null,"url":null,"abstract":"High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.
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