Pankaj Kumar, K. Koley, R. Goswami, A. Maurya, Subindu Kumar
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引用次数: 1
Abstract
This work investigates the numerical analysis based on multiple noise figures of merit in a high-k gate-all-around MOSFET by considering two-port device analysis. The noise in the device is calculated by analyzing the statistical behavior of random voltage sources at the terminals of the MOSFET represented as a two-port system. Although, HfO2 based GAA MOSFET device shows better ON-state current, yet, the device shows degradation in minimum noise figure, autocorrelation, cross-correlation, optimum source impedance, and noise conductance when compared to SiO2 based devices.
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