{"title":"Fabrication and characterization of BiFeO3 thin films and application for photovoltaic devices","authors":"Y. Shirahata, A. Suzuki, T. Oku","doi":"10.1109/ICIPRM.2016.7528694","DOIUrl":null,"url":null,"abstract":"Bismuth ferrite (BiFeO<sub>3</sub>) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO<sub>3</sub> thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO<sub>3</sub> thin films increased with increasing concentration of BiFeO<sub>3</sub> precursor solution. BiFeO<sub>3</sub>/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage characteristics of the photovoltaic devices exhibited rectifying behaviors, indicating that BiFeO<sub>3</sub> layer acted an electron transport layer.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Bismuth ferrite (BiFeO3) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO3 thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO3 thin films increased with increasing concentration of BiFeO3 precursor solution. BiFeO3/CH3NH3PbI3 photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage characteristics of the photovoltaic devices exhibited rectifying behaviors, indicating that BiFeO3 layer acted an electron transport layer.