Electronic states of organic radical-functionalized graphenes and fullerenes: Density functional theory (DFT) study

T. Iyama, H. Kawabata, Takahiro Fukuzumi, H. Tachikawa
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Abstract

Structures and electronic states of the aryl radical functionalized graphene have been investigated by means of density functional theory (DFT) method to elucidate the effects of functionalization on the electronic states of graphene (GR). Also, the reaction mechanism of aryl radical with GR was investigated. The benzene, biphenyl, pterphenyl, and p-quaterphenyl radicals (denoted by (Bz)n (n=1-4), where n means numbers of benzene rings in aryl radical) were examined as aryl radicals. The DFT calculation of GR-(Bz)n (n=1-4) showed that the aryl radical binds to the carbon atom of GR, and a C-C single bond was formed. The binding energies of aryl radicals to GR were calculated to be ca.6.0 kcal mol-1 at the CAM-B3LYP/6-311G(d,p) level. It was found that the activation barrier exists in the aryl radical addition: the barrier heights were calculated to be 10.0 kcal/mol. The electronic states of GR-(Bz)n were discussed on the basis of theoretical results.
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有机自由基功能化石墨烯和富勒烯的电子态:密度泛函理论(DFT)研究
利用密度泛函理论(DFT)方法研究了芳基官能化石墨烯的结构和电子态,阐明了官能化对石墨烯电子态的影响。探讨了芳基自由基与GR的反应机理。苯、联苯、联苯和对季苯基自由基(用(Bz)n (n=1-4)表示,其中n表示芳基自由基中苯环的数目)作为芳基自由基进行检测。GR-(Bz)n (n=1-4)的DFT计算表明,芳基自由基与GR的碳原子结合,形成C-C单键。在CAM-B3LYP/6-311G(d,p)水平上,芳基自由基与GR的结合能约为6.0 kcal mol-1。结果表明,芳基自由基加成过程中存在激活势垒,势垒高度为10.0 kcal/mol。在理论结果的基础上讨论了GR-(Bz)n的电子态。
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