InP-based uni-traveling-carrier photodiodes (UTC-PDs) with 3-dB bandwidth over 135 GHz

Abstract

Summary form only given. In this paper, we report high-performance InP-based UTC-PDs with dipole-doped structure at 1.55 μm wavelength. It is experimentally demonstrated that UTC-PD can achieve both a high photocurrent and a fast photoresponse with high 3-dB bandwidth over 40 GHz by inserting a dipole-doped structure at the InGaAs/InP absorption/collection interface to suppress the current blocking. In addition, in order to predict the 3-dB bandwidth of high-photocurrent and high-speed UTC-PD with dipole-doped structure and to extract model parameters accurately and conveniently, an equivalent circuit and a semi-analytical parameter extraction method are employed in this work. An 18-μm-diameter UTC-PD has yielded a maximum 3-dB bandwidth result over 135 GHz.