Investigation into Enhancing the Gate Electric Field of Transistor

Abstract

The use of electronic devices is increasing day by day in form of static as well as dynamic devices and simultaneously the energy consumption of these devices is increasing because of requirement of information processed is increasing. There is a social need to reduce the power consumption of these devices. Over four decades the efforts of minimizing the transistor size for new and minimized products has introduced new challenges in designing the transistors. As per the technology roadmap for semiconductors, the reduction in power consumption of the MOSFETs used in today's electronic circuits is reaching the fundamental limit and these days new type of device structures are being investigated as possible replacements for traditional metal-oxide-semiconductor field effect transistors (MOSFETs).