Room Temperature Bonding of Semiconductor Materials Based on Mo/Au Interlayer

Abstract

For realizing the heterogeneous integration of semiconductor materials and overcoming the heat dissipation problem of GaN-based high-power semiconductor devices, Mo/Au interlayers were applied to realize the room temperature bonding between Si and Si, GaN and Si, GaN and diamond, GaN HEMTs and diamond wafers in atmospheric air. Low voidage and high bonding strength were achieved. In addition, the temperature distributions and thermal resistances of the devices bonded on different substrates (sapphire, Si, SiC and diamond) with Mo/Au interlayers were calculated by numerical simulation.