A. Chini, S. Rajan, M. Wong, Y. Fu, J. Speck, U. Mishra
{"title":"Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs","authors":"A. Chini, S. Rajan, M. Wong, Y. Fu, J. Speck, U. Mishra","doi":"10.1109/DRC.2005.1553056","DOIUrl":null,"url":null,"abstract":"The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3 Ohm/mm was achieved. The devices were then characterized before and after SiN passivation. Before passivation, large current dispersion was observed in 80mus pulsed I-V measurements compare to the DC I-V curves. The adoption of a SiN passivation layer improved the I-V pulsed characteristics at 80mus but current dispersion was still severe when using shorter (200ns) pulse widths","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3 Ohm/mm was achieved. The devices were then characterized before and after SiN passivation. Before passivation, large current dispersion was observed in 80mus pulsed I-V measurements compare to the DC I-V curves. The adoption of a SiN passivation layer improved the I-V pulsed characteristics at 80mus but current dispersion was still severe when using shorter (200ns) pulse widths
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