Low-resistance wide-voltage-range analog switch for implantable neural stimulators

Yunpu Hu, Songping Mai, Yixin Zhao, Chun Zhang
{"title":"Low-resistance wide-voltage-range analog switch for implantable neural stimulators","authors":"Yunpu Hu, Songping Mai, Yixin Zhao, Chun Zhang","doi":"10.1109/ASICON.2013.6812045","DOIUrl":null,"url":null,"abstract":"Analog switch is a basic component in neural stimulators as it plays an important role in the control process of opening or closing stimulation, switching electrode polarity or power supply. In implantable stimulator circuit, the switch is usually required to work under a wide-range changing voltage and keep a fairly low on-resistance and low charge injection. In this paper, a switch and its driving system are proposed. The driving system can provide a stable high voltage to drive the NMOS transistor switch, thus solving conflicts between high voltage output and low voltage supply. According to the result from transistor-level simulation based on 0.35um CMOS high-voltage technology, the analog switch can achieve fast speed (ton=70ns, toff=280ns), low and flat resistance (4.5Ohm on average), low charge injection (20pC), extremely low current leak(36pA), and wide working voltage range from 1.8V to 12V, which completely meets the application requirement of neural stimulators.","PeriodicalId":150654,"journal":{"name":"2013 IEEE 10th International Conference on ASIC","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 10th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2013.6812045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Analog switch is a basic component in neural stimulators as it plays an important role in the control process of opening or closing stimulation, switching electrode polarity or power supply. In implantable stimulator circuit, the switch is usually required to work under a wide-range changing voltage and keep a fairly low on-resistance and low charge injection. In this paper, a switch and its driving system are proposed. The driving system can provide a stable high voltage to drive the NMOS transistor switch, thus solving conflicts between high voltage output and low voltage supply. According to the result from transistor-level simulation based on 0.35um CMOS high-voltage technology, the analog switch can achieve fast speed (ton=70ns, toff=280ns), low and flat resistance (4.5Ohm on average), low charge injection (20pC), extremely low current leak(36pA), and wide working voltage range from 1.8V to 12V, which completely meets the application requirement of neural stimulators.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于植入式神经刺激器的低阻宽电压范围模拟开关
模拟开关是神经刺激器的基本部件,在刺激的开启或关闭、电极极性的切换或电源的控制过程中起着重要的作用。在植入式刺激电路中,通常要求开关在大范围变化的电压下工作,并保持相当低的导通电阻和低电荷注入。本文提出了一种开关及其驱动系统。驱动系统可以提供稳定的高电压来驱动NMOS晶体管开关,从而解决了高压输出和低压供电的冲突。根据基于0.35um CMOS高压技术的晶体管级仿真结果,模拟开关可以实现快速(ton=70ns, toff=280ns)、低平坦电阻(平均4.5Ohm)、低电荷注入(20pC)、极低漏电流(36pA)、1.8V ~ 12V宽工作电压范围,完全满足神经刺激器的应用需求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Enhanced error correction against multiple-bit-upset based on BCH code for SRAM An area-efficient implementation of ΣΔ ADC multistage decimation filter A single branch charge pump without overstress for RFID tag Networking industry trends in ESD protection for high speed IOs Design and analysis of nano-scale bulk FinFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1