Understanding of carrier transport in high-performance solid phase crystallized poly-Si nano-wire transistors

Abstract

High-performance poly-Si nano-wire transistors were fabricated by Advanced SPC process, that consists of optimized a-Si deposition, crystallization annealing and poly-Si thinning processes. In order to determine what the dominant factor of scattering mechanism is, carrier mobility behavior at each temperature and surface carrier density (Ns) are fully investigated. It reveals that the hole mobility is dominated by phonon scattering in wide Ns regime. On the other hand, it is suggested that the electron mobility is dominated by Coulomb scattering by defects inside grains at low Ns and surface roughness scattering at high Ns.