Detailed Study of Zero Temperature Coefficients for Microwave GaAs and GaN FETs

M. Alim, A. Rezazadeh, C. Gaquière
{"title":"Detailed Study of Zero Temperature Coefficients for Microwave GaAs and GaN FETs","authors":"M. Alim, A. Rezazadeh, C. Gaquière","doi":"10.23919/EUMIC.2018.8539882","DOIUrl":null,"url":null,"abstract":"Detailed study of zero temperature coefficients (ZTC) for microwave GaAs and GaN based high electron mobility transistors were reported and analysed. The measured temperature-dependent data between −40 to 150°C were observed of transconductance and drain current for the both devices. It was found that the variation of threshold voltage (V T) with the drain bias (V ds) has an influence on zero temperature coefficient points. Furthermore, the drain current based ZTC point arises before VT for GaN and after VT for GaAs FETs with respect to drain bias. Inconsistency are observed; most conspicuously that the temperature trends of the threshold voltage for these two device technologies are utterly contrasting. In addition, transconductance based ZTC is absent in GaN device. Furthermore, the effective mobility is estimated using an improved model for the GaN device. The results indicate a well-confined 2-DEG with high mobility as the peak value of effective mobility closely corresponds with the Hall mobility. This work provides some worthwhile insights in microwave circuits design for high temperature applications.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Detailed study of zero temperature coefficients (ZTC) for microwave GaAs and GaN based high electron mobility transistors were reported and analysed. The measured temperature-dependent data between −40 to 150°C were observed of transconductance and drain current for the both devices. It was found that the variation of threshold voltage (V T) with the drain bias (V ds) has an influence on zero temperature coefficient points. Furthermore, the drain current based ZTC point arises before VT for GaN and after VT for GaAs FETs with respect to drain bias. Inconsistency are observed; most conspicuously that the temperature trends of the threshold voltage for these two device technologies are utterly contrasting. In addition, transconductance based ZTC is absent in GaN device. Furthermore, the effective mobility is estimated using an improved model for the GaN device. The results indicate a well-confined 2-DEG with high mobility as the peak value of effective mobility closely corresponds with the Hall mobility. This work provides some worthwhile insights in microwave circuits design for high temperature applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
微波GaAs和GaN场效应管零温度系数的详细研究
对微波GaAs和GaN基高电子迁移率晶体管的零温度系数进行了详细的研究和分析。在- 40至150°C之间,观察到两种器件的跨导和漏极电流的测量温度相关数据。发现阈值电压(V T)随漏极偏压(V ds)的变化对零温度系数点有影响。此外,关于漏极偏置,基于漏极电流的ZTC点在GaN的VT之前出现,而在GaAs fet的VT之后出现。观察到不一致;最明显的是,这两种器件技术的阈值电压的温度趋势完全相反。此外,在GaN器件中不存在基于跨导的ZTC。此外,利用改进的模型估计了GaN器件的有效迁移率。结果表明,有效迁移率的峰值与霍尔迁移率密切相关,具有良好的约束和高迁移率的2-DEG。这项工作为高温应用的微波电路设计提供了一些有价值的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Multipurpose 76 GHz Radar Transceiver System for Automotive Applications Based on SiGe MMICs X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications 110–135 GHz SiGe BiCMOS Frequency Quadrupler Based on a Single Gilbert Cell Robust X-band GaN LNA with Integrated Active Limiter Optimization of PCB Transitions for Vertical Solderless Coaxial Connectors up to 67 GHz
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1