Zhen-zhu Zheng, Yuhao Shi, Xinyu Liang, Chunqing Wang
{"title":"The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device","authors":"Zhen-zhu Zheng, Yuhao Shi, Xinyu Liang, Chunqing Wang","doi":"10.30564/ssid.v1i1.606","DOIUrl":null,"url":null,"abstract":"In this paper, a novel capacitor-inductor integrated structure was proposed. The dielectric material BaTiO3 (BTO) and ferromagnetic material Ni0.5Zn0.5Fe2O4 (NZFO) was prepared by sol-gel method. Phase composition and morphology of the thin films were characterized by XRD, SEM and AFM. The effect of annealing temperature on film crystallinity, surface morphology, dielectric properties and ferromagnetism were investigated. When the annealing temperature was 700 °C, the BTO film and the NZFO film got the better dielectric properties and ferromagnetic properties. Then the BTO thin film was spin-coated on the substrate, and the NZFO thin film was in-situ sintered on the BTO thin film. The composite film possessed both ferromagnetism and dielectric properties. Finally, an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.","PeriodicalId":315789,"journal":{"name":"Semiconductor Science and Information Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Information Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30564/ssid.v1i1.606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a novel capacitor-inductor integrated structure was proposed. The dielectric material BaTiO3 (BTO) and ferromagnetic material Ni0.5Zn0.5Fe2O4 (NZFO) was prepared by sol-gel method. Phase composition and morphology of the thin films were characterized by XRD, SEM and AFM. The effect of annealing temperature on film crystallinity, surface morphology, dielectric properties and ferromagnetism were investigated. When the annealing temperature was 700 °C, the BTO film and the NZFO film got the better dielectric properties and ferromagnetic properties. Then the BTO thin film was spin-coated on the substrate, and the NZFO thin film was in-situ sintered on the BTO thin film. The composite film possessed both ferromagnetism and dielectric properties. Finally, an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.
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