Low workfunction fully silicided gate on SiO/sub 2//Si and LaAlO/sub 3//GOI n-MOSFETs

Abstract

The main challenges for metal-gate/high-k CMOS are to find dual workfunction gates and robust high-k dielectrics. The low workfunction metal-gate for n-MOS is especially difficult since it reacts with oxygen rapidly and is hard to form a silicide or nitride. We have successfully developed 4.2 and 4.3 eV low workfunction NiSi:Hf and NiTiSi gates that were integrated onto SiO/sub 2//Si, novel high-k LaAlO/sub 3//Si and LaAlO/sub 3//GOI n-MOSFETs. The Hf or TiSi is for low workfunction control and the NiSi is for low resistivity.