N. Yamanaka, K. Endo, K. Genda, H. Fukuda, T. Kishimoto, S. Sasaki
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引用次数: 49
Abstract
This paper describes a 320 Gb/s high-speed multi-chip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCMs that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSIs are mounted on MCM using the 150 /spl mu/m very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput and it is applicable for future B-ISDN.<>
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