Extensive analysis of band alignment engineering on the open circuit voltage performance of a GaAs/GaSb hetero structure solar cell

G. Sahoo, G. P. Mishra
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Abstract

Maximum use of solar spectrum is possible through the selection of suitable band gap material in a solar cell. Single junction hetero structure solar cell provides a better opportunity by opting different materials with different band gap in the preparation of such device. But the problem arises with the large lattice mismatch and band discontinuity among these materials, which drastically reduces the open circuit voltage $(\mathrm{V}_{\mathrm{oc}})$ as well as the fill factor of the cell. In this work, band alignment engineering has been introduced for such type of problems. The device is simulated and verified using Silvaco TCAD suite. An extensive study is carried out in terms of SRH, radiative recombination and its effect on $\mathrm{V}_{\mathrm{oc}}$ of the cell for different band offset values. It is found that the reduction in band discontinuity improves the $\mathrm{V}_{\mathrm{oc}}$ of the device.
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带对准工程对GaAs/GaSb异质结构太阳能电池开路电压性能的广泛分析
通过在太阳能电池中选择合适的带隙材料,可以最大限度地利用太阳光谱。单结异质结构太阳能电池通过选择具有不同带隙的不同材料来制备该器件提供了更好的机会。但是,由于这些材料之间存在较大的晶格失配和带不连续,从而大大降低了开路电压$(\ mathm {V}_{\ mathm {oc}})$以及电池的填充因子。在这项工作中,引入了带对准工程来解决这类问题。利用Silvaco TCAD套件对该装置进行了仿真和验证。研究了不同波段偏移值下的SRH、辐射复合及其对单元$\ mathm {V}_{\ mathm {oc}}$的影响。发现带不连续的减小提高了器件的$\mathrm{V}_{\mathrm{oc}}$。
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