{"title":"Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters","authors":"Der-woei Wu, D.L. Miller, M. Fukuda, Y. Yun","doi":"10.1109/GAAS.1993.394456","DOIUrl":null,"url":null,"abstract":"A new parameter extraction technique for heterojunction bipolar transistors (HBTs) is described. Utilizing a novel low frequency extraction algorithm, the intrinsic elements and the resistive parasitics are obtained. The overall small-signal equivalent circuit of HBTs is then determined based on those extracted element values. This technique advances current equivalent circuit modeling capability of HBTs by minimizing the interactive computer optimization/simulation process and removing the need of special test structures.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
A new parameter extraction technique for heterojunction bipolar transistors (HBTs) is described. Utilizing a novel low frequency extraction algorithm, the intrinsic elements and the resistive parasitics are obtained. The overall small-signal equivalent circuit of HBTs is then determined based on those extracted element values. This technique advances current equivalent circuit modeling capability of HBTs by minimizing the interactive computer optimization/simulation process and removing the need of special test structures.<>
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