A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow
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引用次数: 72
Abstract
Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.
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