S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee
{"title":"Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs","authors":"S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee","doi":"10.1109/DRC.2005.1553128","DOIUrl":null,"url":null,"abstract":"New structural approach of Gd<sub>2</sub>O<sub>3</sub> incorporated HfO<sub>2</sub> multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd<sub>2</sub>O<sub>3</sub> with bottom HfO<sub>2</sub> bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd<sub>2</sub>O <sub>3</sub>/HfO<sub>2</sub> dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO<sub>2</sub>. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> are observed","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
New structural approach of Gd2O3 incorporated HfO2 multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd2O3 with bottom HfO2 bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd2O 3/HfO2 dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO2. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd2O3/HfO2 are observed
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
