{"title":"A high sensitivity polysilicon diaphragm condenser microphone","authors":"Pang-Cheng Hsu, C. Mastrangelo, K. D. Wise","doi":"10.1109/MEMSYS.1998.659822","DOIUrl":null,"url":null,"abstract":"This paper presents the analysis, design, fabrication, and testing of a condenser microphone utilizing a thin low-stress polycrystalline silicon diaphragm suspended above a p+ perforated back plate. The microphone is fabricated using a combination of surface and bulk micromachining techniques in a single wafer process without the need of wafer bonding. The device shows sensitivities of -34 dB (ref. To 1 V/Pa) for 2 mm diaphragms with bias of 13 V and -37 dB for 2.6 mm-wide diaphragms at 10 V in good agreement with expected performance calculations.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"88","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1998.659822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 88

Abstract

This paper presents the analysis, design, fabrication, and testing of a condenser microphone utilizing a thin low-stress polycrystalline silicon diaphragm suspended above a p+ perforated back plate. The microphone is fabricated using a combination of surface and bulk micromachining techniques in a single wafer process without the need of wafer bonding. The device shows sensitivities of -34 dB (ref. To 1 V/Pa) for 2 mm diaphragms with bias of 13 V and -37 dB for 2.6 mm-wide diaphragms at 10 V in good agreement with expected performance calculations.
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一种高灵敏度多晶硅膜片电容传声器
本文介绍了一种利用薄型低应力多晶硅膜片悬挂在p+穿孔背板上的电容式麦克风的分析、设计、制造和测试。该麦克风是在单一晶圆工艺中使用表面和体微加工技术的组合制造的,而不需要晶圆键合。该器件的灵敏度为-34 dB(参考值为1 V/Pa), 2毫米隔膜,偏置为13 V, 2.6毫米宽隔膜在10 V时为-37 dB,与预期的性能计算很好地吻合。
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