F. Dubecký, B. Zat’ko, V. Nečas, M. Sekáčová, J. Huran, P. Boháček, C. Ferrari, P. Kordos, A. Forster
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引用次数: 0
Abstract
In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic "back" electrode is demonstrated.
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