TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

Abstract

Negative and Positive Bias Temperature Instabilities (NBTI, PBTI) respectively in P and N channel High-K Metal Gate (HKMG) MOSFETs are modeled by trap generation (TG) and charge trapping (CT) and validated against measured data. The mechanism of TG (interface) is incorporated into TCAD and is separately validated using independent experiments. BTI kinetics is modeled at different stress bias (VG) and temperature (T). Impacts of Nitrogen (N%) and Equivalent Oxide Thickness (EOT) scaling on the magnitude of BTI and its time, VG and T dependencies are modeled.