{"title":"Modelling of the Planar Hall Sensor with Photosensitive Active Area","authors":"O. Oliinyk, Vitalii Sergiichuk","doi":"10.1109/ISSE57496.2023.10168346","DOIUrl":null,"url":null,"abstract":"This paper is devoted to the modelling of the planar Hall sensor on the surface of photosensitive CdSmonocrystal. Simulation of designed planar Hall sensor has properties different from traditional Hall sensors. Experimental research of planar Hall sensor confirms the change of the Hall voltage after the external illumination by 150 mW laser with wavelength 530 nm. Measurement range of designed magnetic field sensor is 0-2 T. Experimental results of planar Hall sensor work under 0.1 T magnetic field are shown. Achieved results of increased sensitivity of planar Hall sensor after laser irradiation of its active area are presented.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE57496.2023.10168346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper is devoted to the modelling of the planar Hall sensor on the surface of photosensitive CdSmonocrystal. Simulation of designed planar Hall sensor has properties different from traditional Hall sensors. Experimental research of planar Hall sensor confirms the change of the Hall voltage after the external illumination by 150 mW laser with wavelength 530 nm. Measurement range of designed magnetic field sensor is 0-2 T. Experimental results of planar Hall sensor work under 0.1 T magnetic field are shown. Achieved results of increased sensitivity of planar Hall sensor after laser irradiation of its active area are presented.
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