Role of Mn Doping on the Electromechanical Properties of [001] Domain Engineered Single crystals

M. Guennou, C. Augier, H. Dammak, M. Thi, P. Gaucher
{"title":"Role of Mn Doping on the Electromechanical Properties of [001] Domain Engineered Single crystals","authors":"M. Guennou, C. Augier, H. Dammak, M. Thi, P. Gaucher","doi":"10.1109/ISAF.2006.4387882","DOIUrl":null,"url":null,"abstract":"We studied the influence of Mn doping on electromechanical properties of PZN-xPT with x = 7% and 9%. Single crystals oriented along the [111], [011] and [001] directions were poled by a \"field cooling\" process with an applied electric field of 1 kV/cm. It is shown that Mn doping has a significant influence on the single domain crystals in both cases. It modifies the phase symmetry of single domain PZN-7PT from orthorhombic to rhombohedral. It reduces permittivity perpendicular to polarization direction of single domain PZN-9PT by about 40%. This change in the properties of the bulk material is the main cause for the decrease of permittivity observed in [001] poled PZN-9PT crystals. Further effects of doping on the properties of [001] domain engineered crystals are a decrease of the piezoelectric coefficient, a hardening of the material and an increase of the mechanical quality factor.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 15th ieee international symposium on the applications of ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2006.4387882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We studied the influence of Mn doping on electromechanical properties of PZN-xPT with x = 7% and 9%. Single crystals oriented along the [111], [011] and [001] directions were poled by a "field cooling" process with an applied electric field of 1 kV/cm. It is shown that Mn doping has a significant influence on the single domain crystals in both cases. It modifies the phase symmetry of single domain PZN-7PT from orthorhombic to rhombohedral. It reduces permittivity perpendicular to polarization direction of single domain PZN-9PT by about 40%. This change in the properties of the bulk material is the main cause for the decrease of permittivity observed in [001] poled PZN-9PT crystals. Further effects of doping on the properties of [001] domain engineered crystals are a decrease of the piezoelectric coefficient, a hardening of the material and an increase of the mechanical quality factor.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Mn掺杂对[001]畴工程单晶机电性能的影响
研究了Mn掺杂对x = 7%和9% PZN-xPT机电性能的影响。沿[111],[011]和[001]方向取向的单晶通过施加1 kV/cm的电场的“场冷却”过程极化。结果表明,在两种情况下,Mn掺杂对单畴晶体都有显著的影响。将单畴PZN-7PT的相对称性从正交体改变为菱形体。使单畴PZN-9PT垂直极化方向的介电常数降低约40%。在[001]极化PZN-9PT晶体中观察到介电常数降低的主要原因是块体材料性质的变化。掺杂对[001]畴工程晶体性能的进一步影响是压电系数的降低,材料的硬化和机械质量因子的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Dielectric Behavior of PFW-PT Relaxors: Model-Parameters Extraction Synthesis, Structure and Properties of Pulsed Laser Deposited BiFeO3-PbTiO3 Thin Films Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems Relaxor Ferroelectric 0.2PZN-0.8PZT(53/47) Thick Films Fabricated Using a MOD Process Fabrication and Characterization of ZnO Films for Biological Sensor Application of FPW Device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1