{"title":"Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization","authors":"R. Ishikawa, Y. Takayama, K. Honjo","doi":"10.23919/eumc.2018.8541803","DOIUrl":null,"url":null,"abstract":"A fully integrated asymmetric Doherty power amplifier has been developed by using GaN HEMT MMIC technology. To minimize the circuit size, a two-power-level impedance optimization method was applied instead of using a quarter-wavelength transmission line impedance inverter for load modulation in the Doherty amplifier. For this optimization, asymmetric configuration is required to realize optimum impedance conditions. The 4-GHz-band GaN HEMT Doherty amplifier MMIC exhibited a maximum drain efficiency of 56% and a maximum power-added efficiency (PAE) of 53% at 4.3 GHz, with a saturation output power of 36dBm. In addition, PAE of 44% was achieved at 4.2 GHz on a 6-dB output back-off condition.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2018.8541803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A fully integrated asymmetric Doherty power amplifier has been developed by using GaN HEMT MMIC technology. To minimize the circuit size, a two-power-level impedance optimization method was applied instead of using a quarter-wavelength transmission line impedance inverter for load modulation in the Doherty amplifier. For this optimization, asymmetric configuration is required to realize optimum impedance conditions. The 4-GHz-band GaN HEMT Doherty amplifier MMIC exhibited a maximum drain efficiency of 56% and a maximum power-added efficiency (PAE) of 53% at 4.3 GHz, with a saturation output power of 36dBm. In addition, PAE of 44% was achieved at 4.2 GHz on a 6-dB output back-off condition.
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