Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543670
Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan
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引用次数: 1

Abstract

The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.
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uv -臭氧处理增强Pt/ZnO/Pt电阻随机存取存储器(RRAM)的性能
研究了Pt/ZnO/Pt电阻随机存取存储器(RRAM)的双极电阻开关特性。本文介绍了uv -臭氧处理提高ZnO薄膜与Pt电极界面质量的方法。我们发现UV-Oznoe可以帮助清洁Pt电极表面，并为后续溅射ZnO薄膜的沉积提供良好的表面形貌。实验结果表明，经uv -臭氧处理后的Pt/ZnO/Pt RRAM具有较好的通断电流比和较好的保留时间。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
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