{"title":"Reverse-recovery safe operating area of diodes in power integrated circuits","authors":"P. Hower, Ç. Kaya, S. Pendharkar, C. Jones","doi":"10.1109/ISPSD.2012.6229024","DOIUrl":null,"url":null,"abstract":"Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.
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