Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang, Shengdong Zhang
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引用次数: 0
Abstract
The influence of substrate bias during sputtering on the amorphous indium-gallium-zinc-oxide (a-IGZO) film and back-channel-etch (BCE) a-IGZO TFT is investigated. A mediated substrate bias is benefit to the improvement of a-IGZO film. The BCE a-IGZO TFT with mediate substrate bias of -90 V exhibits good performances with a field effect mobility (μfe) of 7.45 cm2/V·s, a subthreshold swing (SS) of 0.52 V/Dec and an Ion/Ioff current ratio of 109. The gate-bias stress stability is improved by substrate bias with ΔVth was 1.76 V under PBS and -0.88 V under NBS.
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