Linearized high efficient HBT power amplifier module for L-band application

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964377

Y. Noh, T.W. Lee, C. Park

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引用次数: 9

Abstract

A new on-chip linearizer that is applicable to L-band application is proposed. It is composed of base-emitter diode of the active bias transistor and a capacitor for RF signal shorting to the base node of the active bias transistor, which improves the gain compression and phase advance of the power amplifier with no additional DC power consumption, and has negligible signal loss with almost no increase in die area. The linearizer increases the 1 dB gain compression point by 18 dB and phase distortion by 16.49/spl deg/ while maintaining the base bias voltage of the power amplifier. A PCS and W-CDMA dual band power amplifier with single input, single output, and no switch for band selection is implemented by designing the amplifier with broadband characteristics, and exhibits an output power of 28.97(28.3) dBm, PAE of 44.7(37.4)%, and adjacent channel power ratio (ACPR) of -41(-45) dBc at the output power of 28(28) dBm under 3.0 V operation voltage for PCS(W-CDMA) applications.

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l波段应用的线性化高效HBT功率放大器模块

提出了一种适用于l波段应用的片上线性化器。它由主动式偏置晶体管的基极-发射极二极管和射频信号短接到主动式偏置晶体管基极节点的电容组成，在不增加直流功耗的情况下，提高了功率放大器的增益压缩和相位进阶，并且信号损耗可以忽略不计，几乎不增加芯片面积。线性化器在保持功放基极偏置电压的同时，将1db增益压缩点提高了18 dB，相位失真度提高了16.49/spl度。通过设计具有宽带特性的PCS(W-CDMA)双频段功率放大器，实现了单输入、单输出、无选带开关的PCS(W-CDMA)双频段功率放大器，在3.0 V工作电压下，输出功率为28(28)dBm时，输出功率为28.97(28.3)dBm, PAE为44.7(37.4)%，相邻通道功率比(ACPR)为-41(-45)dBc。

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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