Ç. Kurdak, D. Tsui, S. Parihar, H. Manoharan, S. Lyon, M. Shayegan
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引用次数: 0
Abstract
A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.<>