Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev
{"title":"Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes","authors":"Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev","doi":"10.1109/ASDAM.2000.889495","DOIUrl":null,"url":null,"abstract":"The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.
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