V. B. Naik, K. Yamane, J. Kwon, J.H. Lim, N. Balasankaran, N. Chung, L. Y. Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, L. Ma, C. Meng, Y. Otani, L. Zhang, S. H. Jang, T. Ling, J. W. Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, C. Seet, J. Wong, Y. You, S. Soss, T. Chan, S. Siah
{"title":"STT-MRAM Product Reliability and Cross-Talk","authors":"V. B. Naik, K. Yamane, J. Kwon, J.H. Lim, N. Balasankaran, N. Chung, L. Y. Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, L. Ma, C. Meng, Y. Otani, L. Zhang, S. H. Jang, T. Ling, J. W. Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, C. Seet, J. Wong, Y. You, S. Soss, T. Chan, S. Siah","doi":"10.1109/EDTM53872.2022.9798086","DOIUrl":null,"url":null,"abstract":"STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and internet of things, the usage of STT-MRAM in MCU and MPU products has become the reality. The product reliability of industrial-grade (-40~125°C) 40Mb 22FDX® embedded-MRAM technology having 5x-solder reflows compatibility stack is presented. The stand-by magnetic immunity and cross-talk between MRAM and RF are also discussed.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM53872.2022.9798086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and internet of things, the usage of STT-MRAM in MCU and MPU products has become the reality. The product reliability of industrial-grade (-40~125°C) 40Mb 22FDX® embedded-MRAM technology having 5x-solder reflows compatibility stack is presented. The stand-by magnetic immunity and cross-talk between MRAM and RF are also discussed.
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