Low loss AlInN/GaN Monolithic Microwave Integrated Circuit switch

A. Sattu, D. Billingsley, J. Deng, J. Yang, R. Gaska, M. Shur, G. Simin
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引用次数: 2

Abstract

We report on the first AlInN/GaN Heterojunction Field Effect Transistor (HFET) based Monolithic Microwave Integrated Circuit (MMIC) switch. Lattice-matched AlInN/GaN heterostructures with indium contents of ∼17% exhibit a very large conduction band discontinuity, ΔEC, of 1.7 eV. This large discontinuity results in 2DEG densities as high as 4.7×1013 cm−2 [1] and electron mobilities as high as 1617 cm2/V-s [2]. As a result these heterostructures can achieve record low sheet resistances, making them very attractive candidates for ultra-low loss microwave and other switching devices.
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低损耗alin /GaN单片微波集成电路开关
我们报道了第一种基于AlInN/GaN异质结场效应晶体管(HFET)的单片微波集成电路(MMIC)开关。铟含量为~ 17%的晶格匹配AlInN/GaN异质结构表现出非常大的导带不连续,ΔEC,为1.7 eV。这种大的不连续导致2DEG密度高达4.7×1013 cm−2[1],电子迁移率高达1617 cm2/V-s[2]。因此,这些异质结构可以达到创纪录的低片电阻,使其成为超低损耗微波和其他开关器件的非常有吸引力的候选者。
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