Development and Realization of a Doubleface Populated Multichip Module in Thin Film Technology for High Frequency Application

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI:10.1109/ICMCM.1994.753563

M. Oppermannm, E. Feurer, B. Holl

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引用次数: 1

Abstract

A doubleface populated transmit/receive (TR) multichip module for radar applications has been implemented with multilayer integration technology. The multilayer is designed and fabricated in thin film technology on A1203 ceramic substrates and offers a high order of complexity for high frequency (hf/rf) circuits up to 20 GHz. 100 /spl mu/m striplines with integrated thin film resistors in combination with the dielectric spaced ground layer on the opposite side define the hf layer on top of the substrate. The multilayer logic control unit on the backside consists of three metal layers (ground-, x-, y conductor plane), each seperated by patterned polymeric dielectrics (Polyimide, Benzocyclobutene). This paper describes the necessary technological steps for high performance in thin film technology. Metallization is done in semi-additive technology and the structured dielectric layers are realized with spin coated materials. Through-holes metallization in the substrate allows communication between the two sides and very short interconnections between the GaAs-MMIC's and the logic control unit.

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高频应用薄膜技术中双面填充多芯片模块的开发与实现

采用多层集成技术实现了一种用于雷达应用的双面填充收发(TR)多芯片模块。该多层电路采用薄膜技术在A1203陶瓷衬底上设计和制造，为高达20 GHz的高频(hf/rf)电路提供了高复杂度。带有集成薄膜电阻的100 /spl mu/m带状线与对面的介电间隔接地层相结合，确定了衬底顶部的高频层。背面的多层逻辑控制单元由三个金属层(接地、x线、y线导体平面)组成，每层由图案聚合电介质(聚酰亚胺、苯并环丁烯)隔开。本文介绍了薄膜技术实现高性能的必要工艺步骤。金属化采用半增材技术，结构介质层采用自旋涂层材料实现。基板中的通孔金属化允许双方之间的通信以及GaAs-MMIC和逻辑控制单元之间的非常短的互连。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the International Conference on Multichip Modules

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