S. Garg, A. Garg, S. Bansal, A. Chaudhary, A. Singh, S. R. Kasjoo
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引用次数: 4
Abstract
In this paper, 2D computer simulations based on Silvaco TCAD (Atlas) have been employed to showcase the effect of different dielectric materials on the I-V characteristics of a novel nanoelectronic diode fabricated out of 2DEG materials such as GaN and InGaAs. Being a potential terahertz detector, it is further demonstrated that how these materials affect the parasitic and conductive properties of the devices at very high frequencies.
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