Real-time electrical measurements during laser attack on STT-MRAM

N. Yazigy, J. Postel-Pellerin, V. D. Marca, R. C. Sousa, Anne-Lise Ribotta, G. D. Pendina, P. Canet
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引用次数: 1

Abstract

The goal of the study is to monitor the device’s response during laser injection while being able to track pre- and post-attack conditions. We show the irradiation power affects the STT-MRAM behavior. Our electrical/optical setup enables to know the memory cell behavior to study real-time laser attack countermeasures and device reliability. We have highlighted the possibility to switch, to degrade or even to destruct the cell, depending on the laser power.
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激光攻击STT-MRAM时的实时电测量
该研究的目标是在激光注入期间监测设备的响应,同时能够跟踪攻击前后的情况。结果表明,辐照功率对STT-MRAM的性能有影响。我们的电气/光学设置可以了解存储单元的行为,以研究实时激光攻击对策和设备可靠性。我们已经强调了切换、退化甚至破坏细胞的可能性,这取决于激光的功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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