Wednesday keynote I: FDSOI and FINFET for SoC developments

Abstract

FDSOI and FINFet use the same electrostatic principles for their transistor architectures: the conduction properties of a thin layer of undoped semiconductor material are influenced by an isolated gate. For the same layer thickness, FINFET has more drive current and higher packing densities and FDSOI, due to a buried back-gate, shows more design flexibility, can handle extremely low supply voltages and is more cost effective due to its planar structure. While FINFet enables a continuation of Moore's Law for performance applications like Computing and Network-Switching, FDSOI shows excellent results for applications in the Internet-of-Things-domain. GLOBALFOUNDRIES has presented a dual roadmap based on FINFet and on FDSOI. On the FINFet-side it has a 14nm-technology in production and a 7nm-technology in development. Also, GLOBALFOUNDRIES has the FDSOI-based 22FDX™-Technology in production, and 12FDX™ in development. The talk will outline the application areas for FINFet and FDSOI and give examples on how to use the back-gate bias for maximum design flexibility.