Guohan Hu, Matthias Georg Gottwald, Qing He, Joon-Min Park, G. Lauer, Janusz J. Nowak, S. Brown, B. Doris, D. Edelstein, E. Evarts, Pouya Hashemi, B. Khan, Young-Hwan Kim, C. Kothandaraman, P. MarchackNathan, E. O'Sullivan, M. Reuter, R. Robertazzi, Jonathan Z. Sun, T. Suwannasiri, P. Trouilloud, Y. Zhu, D. Worledge
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引用次数: 15
Abstract
We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Performance degradation observed in 400°C-processed devices was eliminated by optimizing the perpendicular magnetic tunnel junction (p-MTJ) materials. Furthermore, 400°C-compatible double MTJs were developed for the first time and showed 1.5x improvement in switching efficiency compared to single MTJs with identical free layers.
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