An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure

Abstract

An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure for excessive frequency and excessive power applications is designed. The huge 2 dimensional electron gas density obtained at the AlGaN/GaN heterostructure helps to carry more output current, which needs for high output power generation. Normally off behaviour of the device is obtained by the replacement of AlGaN barrier layer with gate insulator, which helps to reduce the power dissipation from the device. Initial Two Dimensional simulations in Sentaurus TCAD showed that the threshold voltage of the device is nearly 0.6V and output current obtained is about 4.5×10-2 A at 10 V gate supply.