Template-based mesh generation for semiconductor devices

Abstract

Creating multiple meshes of a semiconductor device by varying specific geometric properties, like the gate length of a MOSFET, is a crucial step for optimization or scaling processes of these devices. A geometry generation technique for semiconductor devices using geometry templates is presented and implemented in the open source meshing tool ViennaMesh, providing a convenient mechanism for creating device geometries based on a selected set of parameters. These geometries can be used by ViennaMesh to create high-quality meshes to be exported and used by simulation tools. Results of meshes for two-dimensional MOSFET and three-dimensional FinFET devices created by this technique are presented.