{"title":"Study on bottom-up Cu filling process for Through Silicon Via (TSV) metallization","authors":"Gilho Hwang, Hsiao Hsiang-Yao, D. Wee","doi":"10.1109/EPTC.2018.8654289","DOIUrl":null,"url":null,"abstract":"In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Based on voltage behavior of stepwise current electroplating and linear current sweep, TSV Cu electroplating process was optimized and stable solid TSV filling was achieved without any defect.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2018.8654289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Based on voltage behavior of stepwise current electroplating and linear current sweep, TSV Cu electroplating process was optimized and stable solid TSV filling was achieved without any defect.
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