{"title":"A 8-15 GHz, 1W HBT power MMIC with 16 dB gain and 48% peak power added efficiency","authors":"F. Ali, M. Salib, A. Gupta, D. Dawson","doi":"10.1109/GAAS.1993.394433","DOIUrl":null,"url":null,"abstract":"A two-stage X-Ku band MMIC power amplifier has been designed and fabricated using common-emitter GaAs heterojunction bipolar transistors (HBTs). This monolithic amplifier has achieved 16 dB gain, 1.4 W (CW) peak output power and 48% peak power added efficiency (PAE) over 8-15 GHz. Input and output matching networks, as well as biasing circuits, are all contained within this HBT MMIC. To the authors' knowledge, this is the highest efficiency and the highest gain reported for any broadband monolithic power amplifier in the X-Ku band.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
A two-stage X-Ku band MMIC power amplifier has been designed and fabricated using common-emitter GaAs heterojunction bipolar transistors (HBTs). This monolithic amplifier has achieved 16 dB gain, 1.4 W (CW) peak output power and 48% peak power added efficiency (PAE) over 8-15 GHz. Input and output matching networks, as well as biasing circuits, are all contained within this HBT MMIC. To the authors' knowledge, this is the highest efficiency and the highest gain reported for any broadband monolithic power amplifier in the X-Ku band.<>
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