{"title":"Silicon germanium heterobipolar transistor for high speed operation","authors":"E. Kasper, A. Gruhle","doi":"10.1109/CORNEL.1993.303063","DOIUrl":null,"url":null,"abstract":"The high frequency dilemma (limited high frequency operation only possible with high base sheet resistivities) of silicon bipolar junction transistors can be overcome by the application of heterostructures. In a first part we give an overview about the SiGe base heterobipolar-transistor (SiGe-HBT) concept and about the devices realized so far. In the second part we report about our SiGe-HBT device work based on Si-MBE grown structures. Experimental results obtained include transit frequencies up to 100 GHz, maximum oscillation frequencies up to 65 GHz, low base sheet resistivities (0.7 k/spl Omega/spl square/ to 3 k/spl Omega/spl square/), encouraging noise properties (<2 dB at 10 GHz) and successful tests in 24 GHz oscillators.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The high frequency dilemma (limited high frequency operation only possible with high base sheet resistivities) of silicon bipolar junction transistors can be overcome by the application of heterostructures. In a first part we give an overview about the SiGe base heterobipolar-transistor (SiGe-HBT) concept and about the devices realized so far. In the second part we report about our SiGe-HBT device work based on Si-MBE grown structures. Experimental results obtained include transit frequencies up to 100 GHz, maximum oscillation frequencies up to 65 GHz, low base sheet resistivities (0.7 k/spl Omega/spl square/ to 3 k/spl Omega/spl square/), encouraging noise properties (<2 dB at 10 GHz) and successful tests in 24 GHz oscillators.<>
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