Performance and reliability characteristics of GaAs planar doped barrier detector diodes using carbon-doped acceptor spikes grown by molecular beam epitaxy

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303102

R. Malik, Y. Anand, M. Micovic, M. Geva, R. Ryan

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Abstract

Significant improvements in the reliability as well as yield and reproducibility of GaAs planar doped barrier (PDB) microwave detector diodes have been achieved by substituting carbon-doped acceptor regions in place of conventional beryllium acceptor dopant. The superior characteristics of the C-doped PDB diodes are thought to be related to the hyperabrupt and stable carbon acceptor doping spikes (10-60 A) obtained in the n/sup +/-i-p/sup +/-i-n/sup +/ doping profile grown by molecular beam epitaxy (MBE). Mesa geometry PDB diodes (10-20 micron diameter) in micropill packages were RF tested at 10 and 35 GHz. Excellent tangential sensitivity up to -58 dBm was measured with a detector video impedance of 2-50 kohms depending upon barrier height. The electrostatic discharge (ESD) failure threshold voltages were found to be much higher for the PDB diodes (3500 V) in comparison to Schottky detector diodes (300 V).<>

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利用分子束外延生长的掺杂碳受体峰的GaAs平面掺杂势垒探测二极管的性能和可靠性特性

通过用碳掺杂受体区取代传统的铍掺杂受体，可以显著提高GaAs平面掺杂势垒(PDB)微波探测二极管的可靠性、产率和再现性。c掺杂PDB二极管的优越特性被认为与通过分子束外延(MBE)生长的n/sup +/-i-p/sup +/-i-n/sup +/掺杂谱中获得的超突变和稳定的碳受体掺杂峰(10-60 A)有关。在10 GHz和35 GHz频率下对微丸包装中的台面几何PDB二极管(直径10-20微米)进行射频测试。优异的切向灵敏度可达-58 dBm，检测器视频阻抗为2-50 khm，取决于屏障高度。与肖特基检测器二极管(300 V)相比，PDB二极管(3500 V)的静电放电(ESD)失效阈值电压要高得多

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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