Electrically injected quantum dot bottom-emitting photonic crystal single mode microcavity light source

S. Chakravarty, J. Topolancik, S. Chakrabarti, P. Bhattacharya
{"title":"Electrically injected quantum dot bottom-emitting photonic crystal single mode microcavity light source","authors":"S. Chakravarty, J. Topolancik, S. Chakrabarti, P. Bhattacharya","doi":"10.1109/DRC.2005.1553037","DOIUrl":null,"url":null,"abstract":"The authors present here the characteristics of an electrically injected single defect (or larger) photonic crystal microcavity device with quantum dot active region that exhibits single-mode behaviour in the output spectra. The devices are mechanically robust and the design minimizes thermal instabilities","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The authors present here the characteristics of an electrically injected single defect (or larger) photonic crystal microcavity device with quantum dot active region that exhibits single-mode behaviour in the output spectra. The devices are mechanically robust and the design minimizes thermal instabilities
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电注入量子点底发射光子晶体单模微腔光源
本文介绍了具有量子点有源区的电注入单缺陷(或更大缺陷)光子晶体微腔器件在输出光谱中表现出单模行为的特性。该装置机械坚固,设计最大限度地减少了热不稳定性
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