K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto
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引用次数: 0
Abstract
Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.
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