L. C. Costa, Artur S. B. de Mello, L. P. Salles, D. W. de Lima Monteiro
{"title":"Comparative analysis of 350nm CMOS Active Pixel Sensor electronics","authors":"L. C. Costa, Artur S. B. de Mello, L. P. Salles, D. W. de Lima Monteiro","doi":"10.1109/SBMICRO.2015.7298138","DOIUrl":null,"url":null,"abstract":"This paper presents experimental and simulated results of the Active Pixel Sensor (APS) circuit operating in 6 different cell designs. The optical sensor used was a silicon photodiode integrated with its electronics in a standard 350nm CMOS technology. Comparison between the types of circuits was made to determine the operational characteristics for different irradiance values. The results are important to guide choices for different applications.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents experimental and simulated results of the Active Pixel Sensor (APS) circuit operating in 6 different cell designs. The optical sensor used was a silicon photodiode integrated with its electronics in a standard 350nm CMOS technology. Comparison between the types of circuits was made to determine the operational characteristics for different irradiance values. The results are important to guide choices for different applications.
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