{"title":"An investigation of deep electron trap at the different insulator-phosphor interfaces in ZnS:TbOF ACTFEL devices","authors":"C.W. Wang, T. Sheu, Y. Su, M. Yokoyama","doi":"10.1109/SMICND.1996.557413","DOIUrl":null,"url":null,"abstract":"Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta/sub 2/O/sub 5//ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO/sub 2//ZnS:TbOF.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557413","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta/sub 2/O/sub 5//ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO/sub 2//ZnS:TbOF.
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