MOCVD growth of GaAs nanowires using Ga droplets

S. Breuer, F. Karouta, H. Tan, C. Jagadish
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引用次数: 4

Abstract

We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.
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利用Ga液滴MOCVD生长GaAs纳米线
本文报道了采用金属有机化学气相沉积(MOCVD)技术在Si(111)衬底上利用Ga液滴生长GaAs纳米线。找到了合适的生长条件来实现小液滴的稳定以及Ga辅助的砷化镓纳米线的VLS生长。这项工作促进了晶体质量和纳米线表面作为液滴(催化剂)材料功能的比较研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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