Thuy Nguyen, Mitsuhisa Hiraiwa, T. Hirata, S. Kuroki
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引用次数: 1
Abstract
(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction. Ultrahigh-performance LTPS-TFTs were achieved with a very high electron field effect mobility of μFE = 940 cm2/Vs, a high ON/OFF ratio of 105, threshold voltage of 0 V, and subthreshold slope of 0.12 V/dec. This approach is nearly comparable to single crystal Si transistor.
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