{"title":"Thermoelectric properties on n-type Si80Ge20 with different Dopants","authors":"Guiying Xu, Huawei Jiang, Chunyan Zhang, Xiaofeng Wu, Sitong Niu","doi":"10.1109/ICT.2006.331367","DOIUrl":null,"url":null,"abstract":"Si<sub>x</sub>Ge<sub>1-x</sub> is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si<sub>80</sub>Ge<sub>20</sub> alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si<sub>80</sub>Ge<sub>20</sub> respectively by Seebeck coefficient of n type Si<sub>80</sub>Ge<sub>20 </sub> at same time","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 25th International Conference on Thermoelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2006.331367","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
SixGe1-x is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si80Ge20 alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si80Ge20 respectively by Seebeck coefficient of n type Si80Ge20 at same time
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